Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP086N10N3GHKSA1
Part Number | IPP086N10N3GHKSA1 |
Datasheet | IPP086N10N3GHKSA1 datasheet |
Description | MOSFET N-CH 100V 80A TO220-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 73A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 75µA |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |