Product Introduction
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Product Specifications
Part Number |
RN4606(TE85L,F) |
Datasheet |
RN4606(TE85L,F) datasheet |
Description |
TRANS NPN/PNP PREBIAS 0.3W SM6 |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Part Status |
Active |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
100µA (ICBO) |
Frequency - Transition |
200MHz, 250MHz |
Power - Max |
300mW |
Mounting Type |
Surface Mount |
Package / Case |
SC-74, SOT-457 |
Supplier Device Package |
SM6 |
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