Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQU13N10LTU
Part Number | FQU13N10LTU |
Datasheet | FQU13N10LTU datasheet |
Description | MOSFET N-CH 100V 10A IPAK |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |