Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB090N06N3GATMA1
Part Number | IPB090N06N3GATMA1 |
Datasheet | IPB090N06N3GATMA1 datasheet |
Description | MOSFET N-CH 60V 50A TO263-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 34µA |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |