Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1961(TE85L,F)
Product Introduction
RN1961(TE85L,F)
- Part Number
- RN1961(TE85L,F)
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN PREBIAS 0.2W US6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 12pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN1961(TE85L,F) |
| Datasheet | RN1961(TE85L,F) datasheet |
| Description | TRANS 2NPN PREBIAS 0.2W US6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
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