
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMD16AT108

| Part Number | IMD16AT108 |
| Datasheet | IMD16AT108 datasheet |
| Description | TRANS NPN/PNP PREBIAS 0.3W SMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 100 kOhms, 2.2 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V / 82 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SMT6 |