Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / EPC2010C

Product Introduction

EPC2010C

Part Number
EPC2010C
Manufacturer/Brand
EPC
Description
GANFET TRANS 200V 22A BUMPED DIE
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
13616pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2010C
Description GANFET TRANS 200V 22A BUMPED DIE
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 25 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (7-Solder Bar)
Package / Case Die

Latest Products for Transistors - FETs, MOSFETs - Single

FDMC7672S

ON Semiconductor

MOSFET N-CH 30V 8-MLP

FDMS2734

ON Semiconductor

MOSFET N-CH 250V 2.8A POWER56

FDMS3572

ON Semiconductor

MOSFET N-CH 80V 8.8A POWER56

FDMS2572

ON Semiconductor

MOSFET N-CH 150V 4.5A POWER56

FDMS2672

ON Semiconductor

MOSFET N-CH 200V 3.7A POWER56

FDMS3672

ON Semiconductor

MOSFET N-CH 100V 7.4A POWER56-8

Related Products