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Product Introduction

EPC2010C

Part Number
EPC2010C
Manufacturer/Brand
EPC
Description
GANFET TRANS 200V 22A BUMPED DIE
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
13616pcs Stock Available.

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Product Specifications

Part Number EPC2010C
Datasheet EPC2010C datasheet
Description GANFET TRANS 200V 22A BUMPED DIE
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 25 mOhm @ 12A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 100V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (7-Solder Bar)
Package / Case Die

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