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Part Number | SSM3K309T(TE85L,F) |
Datasheet | SSM3K309T(TE85L,F) datasheet |
Description | MOSFET N-CH 20V 4.7A TSM |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 4A, 4V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |