Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYP20N65C3D1M
Part Number | IXYP20N65C3D1M |
Datasheet | IXYP20N65C3D1M datasheet |
Description | IGBT 650V 18A 50W TO220 |
Manufacturer | IXYS |
Series | GenX3™, XPT™ |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 18A |
Current - Collector Pulsed (Icm) | 105A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Power - Max | 50W |
Switching Energy | 430µJ (on), 350µJ (off) |
Input Type | Standard |
Gate Charge | 30nC |
Td (on/off) @ 25°C | 19ns/80ns |
Test Condition | 400V, 20A, 20 Ohm, 15V |
Reverse Recovery Time (trr) | 30ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |