Product Introduction
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See Product Specifications
Product Specifications
Part Number |
EPC2108 |
Datasheet |
EPC2108 datasheet |
Description |
GANFET 3 N-CH 60V/100V 9BGA |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Active |
FET Type |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
60V, 100V |
Current - Continuous Drain (Id) @ 25°C |
1.7A, 500mA |
Rds On (Max) @ Id, Vgs |
190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs |
0.22nC @ 5V, 0.044nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
22pF @ 30V, 7pF @ 30V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
9-VFBGA |
Supplier Device Package |
9-BGA (1.35x1.35) |
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