Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IPG15N06S3L-45
Part Number | IPG15N06S3L-45 |
Datasheet | IPG15N06S3L-45 datasheet |
Description | MOSFET 2N-CH 55V 15A TDSON-8 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 15A |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1420pF @ 25V |
Power - Max | 21W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |