Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI1404BDH-T1-E3
Part Number | SI1404BDH-T1-E3 |
Datasheet | SI1404BDH-T1-E3 datasheet |
Description | MOSFET N-CH 30V 1.9A SOT363 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta), 2.37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 238 mOhm @ 1.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.32W (Ta), 2.28W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 (SOT-363) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |