Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PHD38N02LT,118
Part Number | PHD38N02LT,118 |
Datasheet | PHD38N02LT,118 datasheet |
Description | MOSFET N-CH 20V 44.7A DPAK |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 44.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.1nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 57.6W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |