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Product Introduction
BUK9E4R4-80E,127
- Part Number
- BUK9E4R4-80E,127
- Manufacturer/Brand
- NXP USA Inc.
- Description
- MOSFET N-CH 80V 120A I2PAK
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchMOS™
- Quantity
- 5602pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | BUK9E4R4-80E,127 |
| Description | MOSFET N-CH 80V 120A I2PAK |
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 5V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 17130pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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