Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN4611(TE85L,F)
Product Introduction
RN4611(TE85L,F)
- Part Number
- RN4611(TE85L,F)
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS NPN/PNP PREBIAS 0.3W SM6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 3175pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN4611(TE85L,F) |
| Datasheet | RN4611(TE85L,F) datasheet |
| Description | TRANS NPN/PNP PREBIAS 0.3W SM6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Related Products
- NSBC123EPDXV6T1
- NSBC123EPDXV6T1G
- NSBC123JDXV6T1
- NSBC123JDXV6T5
- NSBC123JPDXV6T1
- NSBC124EDXV6T1
- NSBC124EPDXV6T1
- NSBC124XDXV6T1
- NSBC124XPDXV6T1G
- NSBC124XPDXV6T5G
- NSBC143EDXV6T1
- NSBC143EPDXV6T1
- NSBC143TDXV6T1
- NSBC143TPDXV6T1
- NSBC143TPDXV6T5G
- NSBC143ZDXV6T1
- NSBC143ZPDXV6T5
- NSBC143ZPDXV6T5G
- NSBC144EPDXV6T1
- NSBC144EPDXV6T5
- NSVB114YPDXV6T1G
- NSVB123JPDXV6T1G
- NSVB124XPDXV6T1G
- NSVB143TPDXV6T1G
- NSVB144EPDXV6T1G
- NSVBC114YPDXV65G
- EMA6DXV5T1
- EMA6DXV5T1G
- EMA6DXV5T5G
- EMC2DXV5T1
- EMC5DXV5T1
- EMG2DXV5T1
- EMG2DXV5T1G
- EMG2DXV5T5
- NSTB1002DXV5T1
- NSTB1003DXV5T1G
- NSTB1004DXV5T1G
- MUN5114DW1T1
- MUN5116DW1T1
- MUN5135DW1T1