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| Part Number | NSBC113EDXV6T1G | 
| Datasheet | NSBC113EDXV6T1G datasheet | 
| Description | TRANS 2NPN PREBIAS 0.5W SOT563 | 
| Manufacturer | ON Semiconductor | 
| Series | - | 
| Part Status | Obsolete | 
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 1 kOhms | 
| Resistor - Emitter Base (R2) | 1 kOhms | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V | 
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA | 
| Current - Collector Cutoff (Max) | 500nA | 
| Frequency - Transition | - | 
| Power - Max | 500mW | 
| Mounting Type | Surface Mount | 
| Package / Case | SOT-563, SOT-666 | 
| Supplier Device Package | SOT-563 |