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Product Introduction

SIE836DF-T1-GE3

Part Number
SIE836DF-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 200V 18.3A POLARPAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8745pcs Stock Available.

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Product Specifications

Part Number SIE836DF-T1-GE3
Datasheet SIE836DF-T1-GE3 datasheet
Description MOSFET N-CH 200V 18.3A POLARPAK
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 100V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (SH)
Package / Case 10-PolarPAK® (SH)

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