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Part Number | HTNFET-D |
Datasheet | HTNFET-D datasheet |
Description | MOSFET N-CH 55V 8-DIP |
Manufacturer | Honeywell Aerospace |
Series | HTMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V |
Vgs (Max) | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 28V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tj) |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 8-CDIP-EP |
Package / Case | 8-CDIP Exposed Pad |