Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTDG14GPT100
Part Number | DTDG14GPT100 |
Datasheet | DTDG14GPT100 datasheet |
Description | TRANS PREBIAS NPN 2W MPT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 80MHz |
Power - Max | 2W |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | MPT3 |