Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
| Part Number |
IRFD320 |
| Datasheet |
IRFD320 datasheet |
| Description |
MOSFET N-CH 400V 490MA 4-DIP |
| Manufacturer |
Vishay Siliconix |
| Series |
- |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
400V |
| Current - Continuous Drain (Id) @ 25°C |
490mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
1.8 Ohm @ 210mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
410pF @ 25V |
| FET Feature |
- |
| Power Dissipation (Max) |
1W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Package / Case |
4-DIP (0.300", 7.62mm) |
Latest Products for Transistors - FETs, MOSFETs - Single
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 7.5A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 7.5A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 7.5A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 9A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 8.5A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 9A TO-220SIS