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Product Introduction

EPC2105ENG

Part Number
EPC2105ENG
Manufacturer/Brand
EPC
Description
GAN TRANS 2N-CH 80V BUMPED DIE
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
9340pcs Stock Available.

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Product Specifications

Part Number EPC2105ENG
Description GAN TRANS 2N-CH 80V BUMPED DIE
Manufacturer EPC
Series eGaN®
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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