
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DF11MR12W1M1B11BOMA1

| Part Number | DF11MR12W1M1B11BOMA1 |
| Datasheet | DF11MR12W1M1B11BOMA1 datasheet |
| Description | MOSFET MODULE 1200V 50A |
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |