
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRDNB16W-7

| Part Number | DRDNB16W-7 |
| Datasheet | DRDNB16W-7 datasheet |
| Description | TRANS PREBIAS NPN/DIODE SOT363 |
| Manufacturer | Diodes Incorporated |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased + Diode |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 200MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |