Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFT12N100F
Part Number | IXFT12N100F |
Datasheet | IXFT12N100F datasheet |
Description | MOSFET N-CH 1000V 12A TO268 |
Manufacturer | IXYS-RF |
Series | HiPerRF™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 (IXFT) |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |