Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK8R2A06PL,S4X
Part Number | TK8R2A06PL,S4X |
Datasheet | TK8R2A06PL,S4X datasheet |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIX-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 11.4 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id | 2.5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 28.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 36W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |