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Part Number | TJ8S06M3L(T6L1,NQ) |
Datasheet | TJ8S06M3L(T6L1,NQ) datasheet |
Description | MOSFET P-CH 60V 8A DPAK-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |