Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IRG7CH30K10EF
Part Number | IRG7CH30K10EF |
Description | IGBT CHIP WAFER |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 10A |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2.56V @ 15V, 10A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 4.8nC |
Td (on/off) @ 25°C | 10ns/90ns |
Test Condition | 600V, 10A, 22 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |