Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / NGTD28T65F2WP

Product Introduction

NGTD28T65F2WP

Part Number
NGTD28T65F2WP
Manufacturer/Brand
ON Semiconductor
Description
IGBT TRENCH FIELD STOP 650V DIE
Category
Transistors - IGBTs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
257pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number NGTD28T65F2WP
Datasheet NGTD28T65F2WP datasheet
Description IGBT TRENCH FIELD STOP 650V DIE
Manufacturer ON Semiconductor
Series -
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - IGBTs - Single

IKW75N60H3FKSA1

Infineon Technologies

IGBT 600V 80A 428W TO247-3

IGW30N60TPXKSA1

Infineon Technologies

IGBT 600V 53A TO247-3

IHW50N65R5XKSA1

Infineon Technologies

IGBT 650V 80A 282W TO247

IKW40N60DTPXKSA1

Infineon Technologies

IGBT 600V 67A TO247-3

IGW50N60TPXKSA1

Infineon Technologies

IGBT 600V 80A TO247-3

IKW50N60DTPXKSA1

Infineon Technologies

IGBT 600V 80A TO247-3