
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSM11156DW6T1G

| Part Number | NSM11156DW6T1G |
| Datasheet | NSM11156DW6T1G datasheet |
| Description | TRANS PNP PREBIAS/PNP 0.23W SC88 |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 1 PNP Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 65V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 220 @ 2mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 230mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |