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Part Number | TSM9ND50CI |
Description | 500V 9A 0.9O SINGLE N-CHANNEL |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24.5nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1116pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |