
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMB7AT108

| Part Number | IMB7AT108 |
| Datasheet | IMB7AT108 datasheet |
| Description | TRANS 2PNP PREBIAS 0.3W SOT457 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Not For New Designs |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | - |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-457 |
| Supplier Device Package | SOT-457 |