Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMF8T2R
Product Introduction
EMF8T2R
- Part Number
- EMF8T2R
- Manufacturer/Brand
- Rohm Semiconductor
- Description
- TRANS NPN PREBIAS/NPN 0.15W EMT6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 4161pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | EMF8T2R |
| Datasheet | EMF8T2R datasheet |
| Description | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Not For New Designs |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 320MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
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