Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA100JT12-227
Part Number | GA100JT12-227 |
Datasheet | GA100JT12-227 datasheet |
Description | TRANS SJT 1200V 160A SOT227 |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | - |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 100A |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 800V |
FET Feature | - |
Power Dissipation (Max) | 535W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 |
Package / Case | SOT-227-4, miniBLOC |