
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA100JT12-227

| Part Number | GA100JT12-227 |
| Datasheet | GA100JT12-227 datasheet |
| Description | TRANS SJT 1200V 160A SOT227 |
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Part Status | Obsolete |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 100A |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 535W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |