Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI4800BDY-T1-E3
Part Number | SI4800BDY-T1-E3 |
Datasheet | SI4800BDY-T1-E3 datasheet |
Description | MOSFET N-CH 30V 6.5A 8-SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |