Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM3N90CI C0G

Product Introduction

TSM3N90CI C0G

Part Number
TSM3N90CI C0G
Manufacturer/Brand
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 900V 2.5A ITO220
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
1102pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TSM3N90CI C0G
Datasheet TSM3N90CI C0G datasheet
Description MOSFET N-CH 900V 2.5A ITO220
Manufacturer Taiwan Semiconductor Corporation
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.1 Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 748pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220AB
Package / Case TO-220-3 Full Pack, Isolated Tab

Latest Products for Transistors - FETs, MOSFETs - Single

IRFDC20PBF

Vishay Siliconix

MOSFET N-CH 600V 320MA 4-DIP

IRFD014PBF

Vishay Siliconix

MOSFET N-CH 60V 1.7A 4-DIP

IRFD9210PBF

Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

IRFD9024PBF

Vishay Siliconix

MOSFET P-CH 60V 1.6A 4-DIP

IRFD120PBF

Vishay Siliconix

MOSFET N-CH 100V 1.3A 4-DIP

IRFD9110PBF

Vishay Siliconix

MOSFET P-CH 100V 0.7A 4-DIP