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Product Introduction
SIDR610DP-T1-GE3
- Part Number
- SIDR610DP-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N-CHAN 200V PPAK SO-8DC
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 8087pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SIDR610DP-T1-GE3 |
| Description | MOSFET N-CHAN 200V PPAK SO-8DC |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 39.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 31.9 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8DC |
| Package / Case | PowerPAK® SO-8 |
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