Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SUD50N02-09P-E3
Part Number | SUD50N02-09P-E3 |
Datasheet | SUD50N02-09P-E3 datasheet |
Description | MOSFET N-CH 20V DPAK |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 6.5W (Ta), 39.5W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |