Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFI4510GPBF

Product Introduction

IRFI4510GPBF

Part Number
IRFI4510GPBF
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N CH 100V 35A TO220
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
HEXFET®
Quantity
752pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRFI4510GPBF
Datasheet IRFI4510GPBF datasheet
Description MOSFET N CH 100V 35A TO220
Manufacturer Infineon Technologies
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13.5 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2998pF @ 50V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB Full-Pak
Package / Case TO-220-3 Full Pack

Latest Products for Transistors - FETs, MOSFETs - Single

TJ40S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK-3

TJ50S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 50A DPAK-3

TJ60S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK-3

TJ60S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK-3

TJ80S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 80A DPAK-3

TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK-3