Product Introduction
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Product Specifications
Part Number |
EMD3T2R |
Datasheet |
EMD3T2R datasheet |
Description |
TRANS NPN/PNP PREBIAS 0.15W EMT6 |
Manufacturer |
Rohm Semiconductor |
Series |
- |
Part Status |
Active |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
10 kOhms |
Resistor - Emitter Base (R2) |
10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
250MHz |
Power - Max |
150mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
EMT6 |
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