Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / ALD111933PAL
Part Number | ALD111933PAL |
Datasheet | ALD111933PAL datasheet |
Description | MOSFET 2N-CH 10.6V 8DIP |
Manufacturer | Advanced Linear Devices Inc. |
Series | EPAD® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Matched Pair |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 10.6V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 500 Ohm @ 5.9V |
Vgs(th) (Max) @ Id | 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V |
Power - Max | 500mW |
Operating Temperature | 0°C ~ 70°C (TJ) |
Mounting Type | Through Hole |
Package / Case | 8-DIP (0.300", 7.62mm) |
Supplier Device Package | 8-PDIP |