
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2911(T5L,F,T)

| Part Number | RN2911(T5L,F,T) | 
| Datasheet | RN2911(T5L,F,T) datasheet | 
| Description | TRANS 2PNP PREBIAS 0.2W US6 | 
| Manufacturer | Toshiba Semiconductor and Storage | 
| Series | - | 
| Part Status | Obsolete | 
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 10 kOhms | 
| Resistor - Emitter Base (R2) | - | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | 
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | 
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 
| Frequency - Transition | 200MHz | 
| Power - Max | 200mW | 
| Mounting Type | Surface Mount | 
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 
| Supplier Device Package | US6 |