Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / APTM100H35FTG
Part Number | APTM100H35FTG |
Datasheet | APTM100H35FTG datasheet |
Description | MOSFET 4N-CH 1000V 22A SP4 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 22A |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP4 |
Supplier Device Package | SP4 |