Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN2022UNS-7
Part Number | DMN2022UNS-7 |
Datasheet | DMN2022UNS-7 datasheet |
Description | MOSFET 2 N-CH 20V POWERDI3333-8 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) |
Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 10V |
Power - Max | 1.2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PowerDI3333-8 |