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Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PRMD10Z
Part Number | PRMD10Z |
Datasheet | PRMD10Z datasheet |
Description | PRMD10/SOT1268/DFN1412-6 |
Manufacturer | Nexperia USA Inc. |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA |
Frequency - Transition | 230MHz |
Power - Max | 480mW |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1412-6 |