Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / VS-GB100TH120N
Part Number | VS-GB100TH120N |
Datasheet | VS-GB100TH120N datasheet |
Description | IGBT 1200V 200A 833W INT-A-PAK |
Manufacturer | Vishay Semiconductor Diodes Division |
Series | - |
Part Status | Active |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 200A |
Power - Max | 833W |
Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 8.58nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Double INT-A-PAK (3 + 4) |
Supplier Device Package | Double INT-A-PAK |