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Product Introduction

IPD80R1K4CEATMA1

Part Number
IPD80R1K4CEATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 800V 3.9A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
CoolMOS™
Quantity
5135pcs Stock Available.

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Product Specifications

Part Number IPD80R1K4CEATMA1
Datasheet IPD80R1K4CEATMA1 datasheet
Description MOSFET N-CH 800V 3.9A TO252-3
Manufacturer Infineon Technologies
Series CoolMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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