Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MT3S20TU(TE85L)
Part Number | MT3S20TU(TE85L) |
Datasheet | MT3S20TU(TE85L) datasheet |
Description | RF TRANS NPN 12V 7GHZ UFM |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 20mA, 5V |
Gain | 12dB |
Power - Max | 900mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 5V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | UFM |