Product Introduction
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See Product Specifications
Product Specifications
Part Number |
NDS356P |
Datasheet |
NDS356P datasheet |
Description |
MOSFET P-CH 20V 1.1A SSOT-3 |
Manufacturer |
ON Semiconductor |
Series |
- |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
210 mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5nC @ 5V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
180pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SuperSOT-3 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
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