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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RT1C060UNTR
Part Number | RT1C060UNTR |
Datasheet | RT1C060UNTR datasheet |
Description | MOSFET N-CH 20V 6A TSST8 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 650mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSST |
Package / Case | 8-SMD, Flat Lead |