Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NSVF4017SG4T1G

Product Introduction

NSVF4017SG4T1G

Part Number
NSVF4017SG4T1G
Manufacturer/Brand
ON Semiconductor
Description
RF TRANS NPN 12V 10GHZ SC82FL/
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101
Quantity
3144pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number NSVF4017SG4T1G
Datasheet NSVF4017SG4T1G datasheet
Description RF TRANS NPN 12V 10GHZ SC82FL/
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 17dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Supplier Device Package SC-82FL/MCPH4

Latest Products for Transistors - Bipolar (BJT) - RF

2SC5066-Y,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ SSM

2SC5096-R,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 10V 10GHZ SSM

2SC5108-Y,LF

Toshiba Semiconductor and Storage

RF TRANS NPN 10V 6GHZ SSM

2SC5065-Y(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 12V 7GHZ USM

MT3S16U(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 5V 4GHZ USM

2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

RF TRANS NPN 30V 550MHZ USM